Optoelectronics of group-IV-based materials symposium held April 21-14, 2003, San Francisco, California, U.S.A.

Cover of: Optoelectronics of group-IV-based materials |

Published by Materials Research Society in Warrendale, Pa .

Written in English

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Subjects:

  • Semiconductors -- Optical properties -- Congresses.,
  • Semiconductors -- Design and construction -- Materials -- Congresses.,
  • Compound semiconductors -- Design and construction -- Materials -- Congresses.

Edition Notes

Book details

Other titlesOptoelectronics of group-4-based materials
Statementeditors, Tom Gregorkiewicz ... [et al.].
GenreCongresses.
SeriesMaterials Research Society symposium proceedings ;, v. 770, Materials Research Society symposia proceedings ;, v. 770.
ContributionsGregorkiewicz, Tom., Materials Research Society., Materials Research Society. Meeting, Symposium on Optoelectronics of Group-IV-Based Materials (2003 : San Francisco, Calif.)
Classifications
LC ClassificationsQC611.6.O6 O68 2003
The Physical Object
Paginationxiii, 246 p. :
Number of Pages246
ID Numbers
Open LibraryOL3325818M
ISBN 101558997075
LC Control Number2004299452
OCLC/WorldCa53190659

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Optoelectronics of group-IV-based materials: symposium held April, San Francisco, California, U.S.A. This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics. Show less Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting.

He has published more than refereed scientific papers, 5 book chapters, 28 awarded patents, and more than 20 pending patents.

“Near-infrared Ge photodetectors fabricated on Si substrates with CMOS technology”, in Optoelectronics of Group-Iv-Based Materials, vol.pp. The group IV-based optoelectronic devices are highly desirable for full integration of Si photonics.

In this chapter, a recently developed technology using a novel group IV material system, GeSn/SiGeSn, is presented including growth of the material and demonstrations of emitters and : Wei Du, Shui-Qing Yu.

Silicon Nanocrystal Nucleation as a Function of the Annealing Temperature in SiOx Films In book: Optoelectronics of Group-Iv-Based Materials, Editors: T.

Gregorkiewicz, R. Elliman, P. Tin-based group IV semiconductors: New platforms for opto- and microelectronics on silicon Article in Annual Review of Materials Research 36(1) June with 74 Reads How we measure. Nanomaterials, an international, peer-reviewed Open Access journal.

Dear Colleagues, The new composites and nanostructures of group IV materials provide a platform for advanced devices for nanoelectronics, photonics and sensors. The handbook starts with a set of chapters (Chapters 1 to 7) where the basics of silicon as an optical material are introduced.

These chapters are followed by Chapters 8 to 10, where the different building blocks needed to drive silicon photonic integrated circuits are presented.

Material Research Society Symposium - Proceedings Vol "Optoelectronics of Group-IV-Based Materials". San Francsisco, CA, United States, Aprilpp.ISSN: S. Authors: E. Alloa,1 V. Grande,2 S. Herbst,2 F. Würthner,2 S. Hayes1 Affiliations: 1 University of Cyprus, Department of Chemistry, Nicosia,Cyprus; 2 Universität Würzburg, Institut für Organische Chemie, Würzburg,Germany; Resume: Perylene bisimides (PBIs) are dyes and pigments known for combining high absorption and emission in the visible region with their thermal and.

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Warrendale, PA, Author: Chee Leong Tan. His research interests are in optoelectronics, silicon photonics, and nanophotonics. He has published over papers in refereed journals and book chapters, delivered over invited and contributed conference talks, and given over 50 seminars and colloquia.

As of Novemberhis work has been cited over times with the h-index of In the last few years, guiding light in low-index materials has become increasingly important for apphcations such as optical sensing, interaction with low Optoelectronics of group-IV-based materials book materials, and avoiding nonUnearities in the high-index material.

For example, the electronic properties (i.e. electrical conductivity) of important materials such as silicon or Group III/V compound semiconductors are entirely due to trace amounts of chemical impurities and defects. 2, 3 Many important classes of materials exhibit some form of structural disorder which gives rise to often counterintuitive and Cited by: He then moved to the III-V materials and devices group of the Tyndall National Institute (Ireland) where he designed, fabricated and characterized optoelectronics devices based on III-V compounds.

In particular, he developed III-V light emitters that are transfer printed onto silicon substrates. We report a facile colloidal synthesis of tin–germanium (Sn–Ge) heterostructures in the form of nanorods with a small aspect ratio of –3 and a length smaller than 50 nm.

In the two-step synthesis, presynthesized Sn nanoparticles act as a low-melting-point catalyst for decomposing the Ge precursor, bis[bis(trimethylsilyl)amido]Ge(II), and for crystallization of Ge via solution–liquid Cited by: Integrated Lasers on Silicon provides a comprehensive overview of the state-of-the-art use of lasers on silicon for photonic integration.

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Materials Research Letters 7(3), () DOI: / (40) Advanced Coherent X-Ray Diffraction and Electron Microscopy of Individual InP Nanocrystals on Si Nanotips for III-V-on-Si Electronics and Optoelectronics.

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Salvatore Mirabella CNR-INFM MATIS Italy Nano Four PV - Group IV based quantum structures for future Photovoltaics Abstract/Calendar Photovoltaics (PV) is enormously rising in importance worldwide, both for the widespread economic growth and for the scientific challenges.

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Optoelectronics of group-IV-based materials: symposium held April, San Francisco, California, U.S.A. Title of ser.: Materials Research Society symposium proceedings.

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